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Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices

Furbock, C; Pogany, D; Litzenberger, M; Gornik, E; Seliger, Norbert; Gossner, H...

Journal of Electrostatics.
DOI: 10.1016/S0304-3886(00)00024-3


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Reliability model for Al wire bonds subjected to heel crack failures

Ramminger, S; Seliger, Norbert; Wachutka, G (2000)

Microelectronics Reliability.
DOI: 10.1016/S0026-2714(00)00139-6


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Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices

Pogany, D; Seliger, Norbert; Litzenberger, M; Gossner, H; Stecher, M; Muller-Lynch, T...

Microelectronics Reliability.
DOI: 10.1016/S0026-2714(99)00162-6


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Interferometric temperature mapping during ESD stress and failure analysis of Smart Power technology ESD protection devices

Furbock, C; Pogany, D; Litzenberger, M; Gornik, E; Seliger, Norbert; Gossner, H...

ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS.
DOI: 10.1109/EOSESD.1999.819067


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Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress

Furbock, C; Litzenberger, M; Pogany, D; Gornik, E; Seliger, Norbert; Muller-Lynch, T...

Microelectronics Reliability.
DOI: 10.1016/S0026-2714(99)00124-9


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A Differential Backside Laserprober Technique for the Investigation of the Lateral Temperature Distribution in Power Devices

Fuerboeck, C; Thalhammer, R; Litzenberger, M; Seliger, Norbert; Pogany, D; Gornik, E...

Proc. of ISPSD'99, 193.



Internal Characterisation of IGBTs Using the Backside Laserprober Technique

Fuerboeck, C; Thalhammer, R; Litzenberger, M; Seliger, Norbert; Wachutka, G...

Proc. Seminar Aktuelle Entwicklungen der Mikroelektronik.



Analysis of the temperature evolution from the time resolved thermooptical interferometric measurements with few Fabry-Perot peaks

Pogany, D; Seliger, Norbert; Gornik, E; Stoisiek, M; Lalinsky, T (1998)

Journal of Applied Physics.
DOI: 10.1063/1.368674


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Backside laserprober characterization of thermal effects during high current stress in Smart Power ESD protection devices

Furbock, C; Seliger, Norbert; Pogany, D; Litzenberger, M; Gornik, E; Stecher, M...

International Electron Devices Meeting.
DOI: 10.1109/IEDM.1998.746451


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Internal characterization of IGBTs using the backside laser probing technique - Interpretation of measurement by numerical simulation

Thalhammer, R; Furbock, C; Seliger, Norbert; Deboy, G; Gornik, E; Wachutka, G (1998)

ISPSD - PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS.
DOI: 10.1109/ISPSD.1998.702668


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Study of thermal effects in GaAs micromachined power sensor microsystems by an optical interferometer technique

Pogany, D; Seliger, Norbert; Lalinsky, T; Kuzmik, J; Habas, P; Hrkut, P; Gornik, E (1998)

Microelectronics Journal.
DOI: 10.1016/S0026-2692(97)00057-8


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Thermal simulation and characterization of GaAs micromachined power-sensor microsystems

Burian, E; Pogany, D; Lalinsky, T; Seliger, Norbert; Gornik, E (1998)

Sensors and Actuators A: Physical.
DOI: 10.1016/S0924-4247(98)00072-7


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Characterisation of Semiconductor Devices by Infrared Laser Interferometry

Seliger, Norbert; Gornik, E; Pogany, D; Fuerboeck, C; Habas, P; Thalhammer, R...

E&I Elektrotechnik und Informationstechnik, Sonderheft Trends in der Mikrotechnik, 403.



Validation and calibration of Electrothermal Device Models Using Infrared Laser Probing Techniques

Thalhammer, R; Fuerboeck, C; Seliger, Norbert; Gornik, E; Wachutka, G (1998)

Proc. of MSM'98, 213.



A laser beam method for evaluation of thermal time constant in smart power devices

Seliger, Norbert; Pogany, D; Furbock, C; Habas, P; Gornik, E; Stoisiek, M (1997)

Microelectronics Reliability.
DOI: 10.1016/S0026-2714(97)00149-2


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Time-resolved analysis of self-heating in power VDMOSFETs using backside laserprobing

Seliger, Norbert; Habas, P; Pogany, D; Gornik, E (1997)

Solid-State Electronics.
DOI: 10.1016/S0038-1101(97)00131-7


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A study of temperature distribution in SOI-smart power devices in transient conditions by optical interferometry

Seliger, Norbert; Pogany, D; Fuerboeck, C; Habas, P; Gornik, E; Stoisiek, M...

ESSDERC'97, 372-375.



Backside-Laserprober Technique for Characterisation of Semiconductor Power Devices

N.Seliger, N.Seliger; Fuerboeck, C; Habas, P; Pogany, D; Gornik, E...

Proceedings of the Seminar Basics and Technology of Electronic Devices, 143-147.



Lokale Temperaturbestimmung in Insulated Gate Bipolar Transistoren (IGBTs) mittels Lasersondentechnik

Fuerboeck, C; Thalhammer, R; Seliger, Norbert; Pogany, D; Deboy, G; Wachutka, G...

ÖVE-Schriftenreihe (ISBN 3-85133-010-2) 14, 117-122.



Optical Testing of submicron-technology MOSFETs and bipolar transistors

Pogany, D; Fuerboeck, C; Seliger, Norbert; Habas, P; Gornik, E; Kubicek, S...

ESSDERC'97, 372-375.