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Internal characterization of IGBTs using the backside laser probing technique - Interpretation of measurement by numerical simulation
more| Titel | Internal characterization of IGBTs using the backside laser probing technique - Interpretation of measurement by numerical simulation |
|---|---|
| Medien | ISPSD - PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS |
| Verfasser | R Thalhammer, C Furbock, Prof. Dr. techn. Norbert Seliger, G Deboy, E Gornik, G Wachutka |
| Veröffentlichungsdatum | 1998 |
| Zitation | Thalhammer, R; Furbock, C; Seliger, Norbert; Deboy, G; Gornik, E; Wachutka, G (1998): Internal characterization of IGBTs using the backside laser probing technique - Interpretation of measurement by numerical simulation. ISPSD - PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS. DOI: 10.1109/ISPSD.1998.702668 |